c i r c u i t o u t l i n e d r a w i n g imenion:mm t p a r t o f d i o d e b r i d g e & t h y r i s t o r m a x i m u m r a t i n g s ? parameter ? symbol conditions max. rated value g unit ? average rectified output current io (av) ? 3-phase full wave rectified t c =121 ?R?? non-biased for thyristor 100 a t c = 96 ?R?? biased for thyristor 100 ??? operating junction temperature range tjw 125 150 ???R ?? tj 125 , can not be biased for thyristor -40 +150 ?? storage temperature range tstg -40 +125 ~F?R isolation voltage viso ?g ac 1 g terminal to base, ac 1min. 2500 v mounting torque ? mounting f ??T greased m5 2.4 2.8 ? terminal m5 2.4 2.8 ?? gate terminal t h e r m a l c h a r a c t e r i s t i c s ? parameter ? symbol conditions ? maximum value g unit ?? thermal resistance r th(c-f) ??g(??)???T case to fin , total , greased 0.06 / ( 6 ) p a r t o f d i o d e b r i d g e ( 6 a r m . ) m a x i m u m r a t i n g ? parameter ? symbol max.rated value g unit ??R *1 repetitive peak reverse voltage v rrm 1600 v ???R *1 non-repetitive peak reverse voltage v rsm 1700 v ? parameter ? symbol conditions max. rated value g unit *1 surge forward current i fsm 50hz ?? 1 ?? half sine wave, 1pulse, non-repetitive 1200 a \rge *1 i squared t i 2 t 2 10ms 7200 a 2 S? allowable operating frequency f 400 hz *1 1 ?? value per 1 arm. v g 6 o l p g h 1 0 0 n 1 6
( 6 ) p a r t o f d i o d e b r i d g e ( 6 a r m . ) e l e c t r i c a l c h a r a c t e r i s t i c s ? parameter ? symbol conditions ? maximum value g unit *1 peak reverse current i rm tj = 125 , v rm = v rrm 7 m a ?R *1 peak forward voltage v fm tj = 25 , i fm = 100a 1.20 v ? thermal resistance r th(j-c) ??D?g(??) junction to case , total 0.08 / *1 1 ?? value per 1 arm. ( ) p a r t o f t h y r i s t o r ( 1 a r m . ) m a x i m u m r a t i n g ? parameter ? symbol max.rated value g unit ??R *2 repetitive peak off-state voltage v drm 1600 v ???R *2 non-repetitive peak off-state voltage v dsm 1700 v *2 ?R?? can not be biased for thyristor ? parameter ? symbol conditions max. rated value g unit surge on-state current i tsm 50hz ?? 1 ?? half sine wave, 1pulse, non-repetitive 2000 a \rg i squared t i 2 t 2 10ms 20000 a 2 RN critical rate of rise of turned-on current di/dt v d = 2/3 v drm , i tm = 2 io, tj =125 i g = 200ma, di g /dt = 0.2a/ s 100 a/ s p? peak gate power p gm 5 w ?p? average gate power p g(av) 1 w peak gate current i gm 2 a ?R peak gate voltage v gm 10 v ?R peak gate reverse voltage v rgm 5 v e l e c t r i c a l c h a r a c t e r i s t i c s ? parameter ? symbol conditions ? maximum value g unit min ? typ max peak off-state current i dm tj = 125 , v dm = v drm 20 ma ?R peak off-state voltage v tm tj = 25 , i tm = 100a 1.20 v ? gate current to trigger i gt v d = 6 v, i t = 1a tj= 40 200 ma tj= 25 100 tj=125 50 ??R gate voltage to trigger v gt v d = 6 v, i t = 1a tj= 40 4.0 v tj= 25 2.5 tj=125 2.0 ???R gate non-trigger voltage v gd tj =125 , v d = 2/3 v drm 0.25 v R?RN critical rate of rise of off-state voltage dv/dt tj =125 , v d = 2/3 v drm 500 v/ s ??rg turn-off time t q tj =125 , i tm = io, v d = 2/3 v drm dv/dt = 20v/ s, v r = 100v, \ di/dt = 20a/ s 150 s
? parameter ? symbol conditions ? maximum value g unit min ? typ max ??rg turn-on time t gt tj =25 , v d = 2/3 v drm , i t =3 i o i g = 200ma, di g /dt = 0.2a/ s 6 s Wrg delay time t d 2 s rg rise time t r 4 s ? latching current i l tj =25 100 ma holding current i h tj =25 80 ma ? thermal resistance r th(j-c) ??g junction to case 0.25 /w | \-\s225 approximate weight
transient thermal impedance ^ PGH100N16(diode per 1 arm.) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 time t (s) rg t (s) 0.02 0.05 0.1 0.2 0.5 1 transient thermal impedance rth(j-c) (c/w) ^ ?/w transient thermal impedance ^ PGH100N16(thyristor) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 time t (s) rg t (s) 0.01 0.02 0.05 0.1 0.2 0.5 transient thermal impedance rth(j-c) (c/w) ^ ?/w
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